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1

Determination of silicon nitride film chemical composition to study hydrogen desorption mechanisms

Daniel Benoit, Pierre Morin, Jorge Regolini

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 363 KB

english, 2011

2

Development of Embedded Three-Dimensional 35-nF/mm MIM Capacitor and BiCMOS Circuits Characterization

Giraudin, J.-G., Badets, F., Blanc, J.-P., Chataigner, E., Chappaz, C., Regolini, J.L., Delpech, P.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2007

Language:

english

File:

PDF, 2.48 MB

english, 2007

3

Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor

J.L. Regolini, D. Bensahel, G. Bomchil, J. Mercier

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 457 KB

english, 1989

4

Passivation issues in active pixel CMOS image sensors

J.L. Regolini, D. Benoit, P. Morin

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 331 KB

english, 2007

5

Epitaxial growth of SiGe layers for BiCMOS applications

J.L. Regolini, J. Pejnefors, T. Baffert, C. Morin, P. Ribot, S. Jouan, M. Marty, A. Chantre

Journal:

Materials Science in Semiconductor Processing

Year:

1998

Language:

english

File:

PDF, 640 KB

english, 1998

6

Study of mechanisms involved in photoresist microlens formation

S. Audran, B. Faure, B. Mortini, J. Regolini, G. Schlatter, G. Hadziioannou

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

7

Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

Jurczak, M., Skotnicki, T., Paoli, M., Tormen, B., Martins, J., Regolini, J.L., Dutartre, D., Ribot, P., Lenoble, D., Pantel, R., Monfray, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 206 KB

english, 2000

8

SPIE Proceedings [SPIE SPIE 31st International Symposium on Advanced Lithography - San Jose, CA (Sunday 19 February 2006)] Advances in Resist Technology and Processing XXIII - Study of dynamical formation and shape of microlenses formed by the reflow method

Audran, S., Faure, B., Mortini, B., Aumont, C., Tiron, R., Zinck, C., Sanchez, Y., Fellous, C., Regolini, J., Reynard, J. P., Schlatter, G., Hadziioannou, G., Lin, Qinghuang

Year:

2006

Language:

english

File:

PDF, 294 KB

english, 2006

9

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - SON (silicon on nothing)-a new device architecture for the ULSI era

Jurczak, M., Skotnicki, T., Paoli, M., Tormen, B., Regolini, J.-L., Morin, C., Schiltz, A., Martins, J., Pantel, R., Galvier, J.

Year:

1999

Language:

english

File:

PDF, 262 KB

english, 1999

10

Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

Regolini, J. L., Bensahel, D., Scheid, E., Mercier, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 468 KB

english, 1989

11

Kinetics aspects of TiSi2 deposition without silicon consumption

Bensahel, D., Regolini, J. L., Mercier, J.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 650 KB

english, 1989

12

Web site search engine optimization: a case study of Fragfornet

Gandour, Aurélie, Regolini, Amanda

Journal:

Library Hi Tech News

Year:

2011

Language:

english

File:

PDF, 170 KB

english, 2011

13

Characterization of Porous Silicon: Structural, Optical and Electrical Properties

Badoz, P. A., Bensahel, D., Bomchil, G., Ferrieu, F., Halimaoui, A., Perret, P., Regolini, J. L., Sagnes, I., Vincent, G.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 803 KB

english, 1992

14

Selective Titanium Silicide for Industrial Applications

Maury, D., Regolini, J. L., Gayet, P.

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 2.29 MB

english, 1995

15

Integration of intracellular signaling: Biological analogues of wires, processors and memories organized by a centrosome 3D reference system

Barvitenko, Nadezhda, Lawen, Alfons, Aslam, Muhammad, Pantaleo, Antonella, Saldanha, Carlota, Skverchinskaya, Elisaveta, Regolini, Marco, Tuszynski, Jack A.

Journal:

Year:

2018

Language:

english

File:

PDF, 2.03 MB

english, 2018

16

Élaboration et évaluation de produits géotouristiques

Martin, Simon, Regolini-Bissig, Géraldine, Perret, Amandine, Kozlik, Lenka

Journal:

Téoros Revue de recherche en tourisme

Year:

2010

Language:

french

File:

PDF, 1.96 MB

french, 2010

17

One-Pot Four-Component Reaction: Aqueous TiCl3/PhN+2-Mediated Alkyl Radical Addition to Imines Generated in situ.

Rosalba Cannella, Angelo Clerici, Nadia Pastori, Eva Regolini, Ombretta Porta

Journal:

Year:

2005

File:

PDF, 33 KB

2005

18

Sublimation growth of HgI2 single crystals in the tetragonal phase

Jose Saura, Jorge Luis Regolini

Journal:

Journal of Crystal Growth

Year:

1972

Language:

english

File:

PDF, 214 KB

english, 1972

19

Silicon selective epitaxial growth at reduced pressure and temperature

J.L. Regolini, D. Bensahel, J. Mercier, E. Scheid

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 571 KB

english, 1989

20

Kinetic aspects of selective epitaxial growth using a rapid thermal processing system

J. Mercier, J.L. Regolini, D. Bensahel, E. Scheid

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 822 KB

english, 1989

21

Optical properties of bulk and multi-quantum well SiGe: C heterostructures

P. Boucaud, C. Guedj, D. Bouchier, F.H. Julien, J.-M. Lourtioz, S. Bodnar, J.L. Regolini, E. Finkman

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 283 KB

english, 1995

22

Growth of Si1 − x − yGexCy multi-quantum wells: structural and optical properties

P. Boucaud, C. Guedj, F.H. Julien, E. Finkman, S. Bodnar, J.L. Regolini

Journal:

Thin Solid Films

Year:

1996

Language:

english

File:

PDF, 506 KB

english, 1996

23

Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz

A. Gruhle, P.A. Badoz, F. Chevalier, A. Halimaoui, F. Lalanne, M. Mouis, J.L. Regolini, G. Vincent, D. Bensahel

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

24

Characterization of epitaxial silicon layers made by reduced pressure/temperature CVD

J.L. Regolini, D. Bensahel, E. Scheid, A. Perio, J. Mercier

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 519 KB

english, 1989

25

Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology

J.L. Regolini, E. Mastromatteo, M. Gauneau, J. Mercier, D. Dutartre, G. Bomchil, C. Bernard, R. Madar, D. Bensahel

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 464 KB

english, 1991

26

A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition

P. Gouy-Pailler, M. Haond, D. Mathiot, M. Gauneau, A. Perio, J.L. Regolini

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 509 KB

english, 1993

27

Porous silicon: material properties, visible photo- and electroluminescence

G. Bomchil, A. Halimaoui, I. Sagnes, P.A. Badoz, I. Berbezier, P. Perret, B. Lambert, G. Vincent, L. Garchery, J.L. Regolini

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 1.78 MB

english, 1993

28

Schottky diodes on Si1−x−yGexCy alloys: effect of the C-incorporation

M. Mamor, F. Meyer, D. Bouchier, G. Vialaret, E. Finkman, S. Bodnar, J.L. Regolini

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

29

Selective epitaxial Si based layers and TiSi2 deposition by integrated chemical vapor deposition

J.L. Regolini, J. Margail, S. Bodnar, D. Maury, C. Morin

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 837 KB

english, 1996

30

Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition

C. Oules, A. Halimaoui, J.L. Regolini, R. Herino, A. Perio, D. Bensahel, G. Bomchil

Journal:

Materials Science and Engineering: B

Year:

1989

Language:

english

File:

PDF, 605 KB

english, 1989

31

Epitaxial silicon chemical vapor deposition below atmospheric pressure

J.L. Regolini, D. Bensahel, J. Mercier

Journal:

Materials Science and Engineering: B

Year:

1989

Language:

english

File:

PDF, 853 KB

english, 1989

32

Structural particularities of carbon-incorporated SiGe heterostructures

C. Guedj, D. Bouchier, P. Boucaud, G. Hincelin, X. Portier, A. L'Hoir, S. Bodnar, J.-L. Regolini

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 405 KB

english, 1996

33

Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors

D. Benoit, J. Regolini, P. Morin

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 279 KB

english, 2007

34

TiCl3/PhN2+-mediated radical addition of ethers to aldimines generated in situ under aqueous conditions

Angelo Clerici, Rosalba Cannella, Walter Panzeri, Nadia Pastori, Eva Regolini, Ombretta Porta

Journal:

Tetrahedron Letters

Year:

2005

Language:

english

File:

PDF, 113 KB

english, 2005

35

Spectroscopic ellipsometry of SixGe1−x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

F Ferrieu, P Ribot, J.L Regolini

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 375 KB

english, 2000

36

Local strains in Si1−x−yGexCy alloys as deduced from vibrational frequencies

E. Finkman, H. Rücker, F. Meyer, S.D. Prawer, D. Bouchier, J. Boulmer, S. Bodnar, J.L. Regolini

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 373 KB

1997

37

Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology

E. de Berranger, S. Bodnar, A. Chantre, J. Kirtsch, A. Monroy, A. Granier, M. Laurens, J.L. Regolini, M. Mouis2

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 303 KB

1997

38

Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation

M Mamor, J.-L Perrossier, V Aubry-Fortuna, F Meyer, D Bouchier, S Bodnar, J.L Regolini

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 313 KB

1997

39

Optical characterization by spectroscopic ellipsometry of polycrystalline Si1−xGex of variable Ge composition up to 100% Ge

F Ferrieu, C Morin, J.L Regolini

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 3.36 MB

english, 1998

40

Optical Properties of CuGaS2 near the Fundamental Absorption Edge

J. L. Regolini, S. Lewonczuk, J. Ringeissen, S. Nikitine, C. Schwab

Journal:

physica status solidi (b)

Year:

1973

Language:

english

File:

PDF, 450 KB

english, 1973

41

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

F. Domengie, J. L. Regolini, D. Bauza

Journal:

Journal of Electronic Materials

Year:

2010

Language:

english

File:

PDF, 421 KB

english, 2010

42

Materials and devices toward three-dimensional integration

B. Dunne, S. O'Flanagan, L. Hobbs, C.G. Cahill, A. Mathewson, W.A. Lane, M. Montier, D. Chapuis, Y. Gris, L. Karapiperis, G. Garry, D. Dieumegard, J.L. Regolini, D. Bensahel, J.L. Mermet, H. Bono, H.

Journal:

Microelectronic Engineering

Year:

1988

Language:

english

File:

PDF, 1.19 MB

english, 1988

43

Single-wafer Si and SiGe processes for advanced ULSI technologies

S. Bodnar, C. Morin, J.L. Regolini

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 368 KB

1997

44

Reduced pressure and temperature epitaxial silicon CVD kinetics and applications

J. L. Regolini, D. Bensahel, J. Mercier

Journal:

Journal of Electronic Materials

Year:

1990

Language:

english

File:

PDF, 1000 KB

english, 1990

45

Selective silicon epitaxial growth on a submicrometer WSi2grating: Application to the permeable base transistor

P. A. Badoz, D. Bensahel, L. Guérin, P. Perret, C. Puissant, J. L. Regolini

Journal:

Journal of Electronic Materials

Year:

1990

Language:

english

File:

PDF, 1.78 MB

english, 1990

46

Selective TiSi2deposition with no silicon substrate consumption by rapid thermal processing in a LPCVD reactor

J. Mercier, J. L. Regolini, D. Bensahel

Journal:

Journal of Electronic Materials

Year:

1990

Language:

english

File:

PDF, 650 KB

english, 1990

47

Schottky barrier heights on IV-IV compound semiconductors

F. Meyer, M. Mamor, V. Aubry-Fortuna, P. Warren, S. Bodnar, D. Dutartre, J. L. Regolini

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 687 KB

english, 1996

48

What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?

V. Aubry-Fortuna, J.-L. Perrossier, M. Mamor, F. Meyer, C. Frojdh, G. Thungstrom, C.S. Petersson, S. Bodnar, J.L. Regolini

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 368 KB

english, 1997

49

Further study on selective TiSi2 deposition by CVD

D. Maury, P. Gayet, J.L. Regolini

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 299 KB

english, 1997

50

Characterization of semiconducting iron disilicide obtained by LRP/CVD

Regolini, J., Trincat, F., Sagnes, I., Shapira, Y., Bremond, G., Bensahel, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 222 KB

english, 1992

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